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The principle behind PVD


Physical Vapour Deposition (PVD) produces metal and/or ceramic coatings that can be applied to any substrate that withstands a vacuum and a low level of heat. Synthesis of the film on the item to be coated is obtained through sputtering of a solid source usually known as the target. This takes place in a vacuum chamber. Sputtering of the target is achieved through bombardment by argon ions, generated by the plasma created between the target and the chamber walls. See figure opposite.

This process has numerous fields of application.



The principle behind PVD in reactive mode


Our technology is based on conventional cathodic magnetron sputtering. The synthesis of a pure metal coating is carried out in the presence of an inert gas (argon). In contrast, composites such as nitrides, carbides and oxides are obtained in a reactive atmosphere of mixed gases. The mixture contains both argon, which is necessary for sputtering, and the reactive gas required to form the composite.
For example: introduction of a mix of argon and nitrogen into the vacuum chamber with sputtering of a titanium source for the synthesis of a TiN composite. See figure opposite.